The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Apr. 11, 2019
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kazuki Okuyama, Kyoto, JP;

Shuntaro Takahashi, Kyoto, JP;

Motoharu Haga, Kyoto, JP;

Shingo Yoshida, Kyoto, JP;

Kazuhisa Kumagai, Kyoto, JP;

Hajime Okuda, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/765 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/34 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 21/765 (2013.01); H01L 23/3114 (2013.01); H01L 23/34 (2013.01); H01L 23/49513 (2013.01); H01L 23/4952 (2013.01); H01L 23/49582 (2013.01); H01L 24/48 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/48472 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.


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