The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 08, 2020
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Yuki Yoshiya, Tokyo, JP;
Takuya Hoshi, Tokyo, JP;
Hiroki Sugiyama, Tokyo, JP;
Hideaki Matsuzaki, Tokyo, JP;
Assignee:
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/02271 (2013.01); H01L 21/02378 (2013.01); H01L 21/02458 (2013.01); H01L 21/02516 (2013.01); H01L 21/02609 (2013.01);
Abstract
A first semiconductor layer, a second semiconductor layer, a channel layer, a barrier layer, and a third semiconductor layer are crystal-grown in this order on a first substrate in the +c axis direction, a second substrate is bonded to the side of the barrier layer of the first substrate, and after that, the first substrate is removed, and the first semiconductor layer is selectively thermally decomposed by heating.