The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 03, 2022
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Hyung-Sik Won, Cheongju, KR;

Hyungsup Kim, Yongin, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01); G11C 13/00 (2006.01); G11C 16/30 (2006.01); G11C 16/34 (2006.01); G11C 29/00 (2006.01); G11C 29/44 (2006.01); G11C 29/52 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/783 (2013.01); G11C 13/0097 (2013.01); G11C 16/30 (2013.01); G11C 16/349 (2013.01); G11C 29/44 (2013.01); G11C 29/52 (2013.01); G11C 29/76 (2013.01); G11C 29/785 (2013.01); G11C 29/835 (2013.01); G11C 2029/0411 (2013.01); G11C 2207/2236 (2013.01);
Abstract

A memory system includes a plurality of memory devices and a controller. Each of the memory devices includes a memory cell array, a sense amplifier for amplifying data stored in the memory cell array, a first memory cell sub-array included in the memory cell array directly coupled to the sense amplifier, a switch coupled to the first memory cell sub-array, and a second memory cell sub-array included in the memory cell array coupled to the sense amplifier through the first memory cell sub-array and the switch. When the switch is enabled, the memory device operates as a normal mode, and when the switch is disabled, the memory device operates as a fast mode faster than the normal mode. The controller dynamically sets a mode of each of the memory devices based on requests externally provided, by controlling the switch of each of the memory devices.


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