The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kun-Woo Song, Hwaseong-si, KR;

Jonghwa Kim, Seoul, KR;

Kyungyong Jeoung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 16/0483 (2013.01); G11C 16/34 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H10B 43/27 (2023.02);
Abstract

Disclosed is a storage device, which includes a nonvolatile memory device including a first memory block connected with a plurality of first word lines, and a memory controller connected with the nonvolatile memory device through a plurality of data lines. The memory controller sends a first command to the nonvolatile memory device through the plurality of data lines during a first command input period, sends a parameter to the nonvolatile memory device through the plurality of data lines during an address input period, and sends a second command to the nonvolatile memory device through the plurality of data lines during a second command input period. The nonvolatile memory device applies a turn-on voltage to all the plurality of first word lines connected with the first memory block based on the parameter during a first time in response to the first command and the second command.


Find Patent Forward Citations

Loading…