The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Aug. 13, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Daniel Worledge, San Jose, CA (US);

Pouya Hashemi, Purchase, NY (US);

John Kenneth DeBrosse, Colchester, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/00 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/10 (2023.02); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); H10N 52/80 (2023.02);
Abstract

A spin-orbit torque magnetoresistive random-access memory device formed by forming an array of transistors, where a column of the array includes a source line contacting the source contact of each transistor of the column, forming a spin-orbit-torque (SOT) line contacting the drain contacts of the transistors of the row, and forming an array of unit cells, each unit cell including a spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) cell stack disposed above and in electrical contact with the SOT line, where the SOT-MRAM cell stack includes a free layer, a tunnel junction layer, and a reference layer, a diode structure above and in electrical contact with the SOT-MRAM cell stack, an upper electrode disposed above and in electrical contact with the diode structure.


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