The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Sep. 10, 2021
The Hong Kong University of Science and Technology, Kowloon, HK;
Zhibo Sun, New Territories, HK;
Zhengnan Yuan, New Territories, HK;
Abhishek Kumar Srivastava, Kowloon, HK;
Hoi-Sing Kwok, New Territories, HK;
THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Kowloon, HK;
Abstract
One or more devices, systems, methods and/or apparatus to facilitate suppression of fringe field effect, such as for diffraction grating and/or display purposes. In one embodiment, a ferroelectric liquid crystal (FLC) element can comprise a pair of conductive substrates, a FLC layer having a helical pitch and positioned between the conductive substrates, one or more spacers fixedly positioned between the conductive substrates, and an alignment layer positioned between the FLC layer and one of the conductive substrates. The alignment layer can be disposed at least partially contiguous with the FLC layer. The FLC layer can comprise a chiral smectic C* liquid crystal layer having at least one of a helical pitch smaller than an average cell gap of the FLC layer, or an average helical pitch of the FLC layer being smaller than an average thickness of the FLC layer between the conductive substrates.