The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 21, 2022
Electric Power Science & Research Institute of State Grid Tianjin Electric Power Company, Tianjin, CN;
State Grid Tianjin Electric Power Company, Tianjin, CN;
Shengchen Fang, Tianjin, CN;
Pengxian Song, Tianjin, CN;
Xu Li, Tianjin, CN;
Yang Yu, Tianjin, CN;
Mingzheng Zhu, Tianjin, CN;
Zhengzheng Meng, Tianjin, CN;
Fengzheng Zhou, Tianjin, CN;
Xiaohui Zhu, Tianjin, CN;
Lei Yang, Tianjin, CN;
Jun Zhang, Tianjin, CN;
Chun He, Tianjin, CN;
Nan Wang, Tianjin, CN;
Ke Xu, Tianjin, CN;
Qinghua Tang, Tianjin, CN;
Chi Zhang, Tianjin, CN;
Haoming Wang, Tianjin, CN;
Longji Li, Tianjin, CN;
Cheng Sun, Tianjin, CN;
Wei Fan, Tianjin, CN;
Abstract
Defect detection method for a semi-conducting bedding layer of a power cable includes: obtaining a length parameter, a corrugation pitch parameter, radius parameters, and a thickness parameter of a power cable; obtaining a first resistance value between a shield and a corrugated sheath, and calculating a second resistance value of the shield based on the length parameter and the corrugation pitch parameter; calculating a radial resistance value of the semi-conducting bedding layer based on the first resistance value and the second resistance value; determining a contact angle of a critical point of contact between the corrugated sheath and the semi-conducting bedding layer based on the radius parameters and the thickness parameter; calculating volume resistivity of the semi-conducting bedding layer based on the radial resistance value and the contact angle; and comparing the volume resistivity with a preset evaluation parameter to obtain a defect detection result of the semi-conducting bedding layer.