The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

May. 07, 2021
Applicant:

Nuvoton Technology Corporation Japan, Kyoto, JP;

Inventors:

Kazuhiko Yamanaka, Osaka, JP;

Hideki Kasugai, Shiga, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21S 41/16 (2018.01); F21S 41/176 (2018.01); F21S 41/19 (2018.01); F21S 41/20 (2018.01); F21S 41/32 (2018.01); F21S 41/365 (2018.01); F21S 41/39 (2018.01); F21S 45/70 (2018.01); F21V 7/24 (2018.01); F21V 9/32 (2018.01); F21V 9/38 (2018.01); F21V 9/45 (2018.01); F21V 13/14 (2006.01); F21Y 115/30 (2016.01); G02B 5/02 (2006.01); G02B 27/10 (2006.01); H01L 33/50 (2010.01); H01S 5/00 (2006.01); H01S 5/02326 (2021.01); H01S 5/0683 (2006.01); H01S 5/02251 (2021.01); H01S 5/02255 (2021.01); H01S 5/068 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
F21S 41/16 (2018.01); F21S 41/176 (2018.01); F21S 41/192 (2018.01); F21S 41/285 (2018.01); F21S 41/321 (2018.01); F21S 41/365 (2018.01); F21S 41/39 (2018.01); F21S 45/70 (2018.01); F21V 7/24 (2018.02); F21V 9/32 (2018.02); F21V 9/38 (2018.02); F21V 9/45 (2018.02); F21V 13/14 (2013.01); G02B 5/0205 (2013.01); G02B 27/1006 (2013.01); H01L 33/502 (2013.01); H01S 5/005 (2013.01); H01S 5/0087 (2021.01); H01S 5/02326 (2021.01); F21Y 2115/30 (2016.08); H01S 5/02251 (2021.01); H01S 5/02255 (2021.01); H01S 5/06825 (2013.01); H01S 5/0683 (2013.01); H01S 5/32341 (2013.01);
Abstract

A light source device includes a semiconductor light-emitting device which emits coherent excitation light, and a wavelength conversion element which is spaced from the semiconductor light-emitting device, generates fluorescence by converting the wavelength of the excitation light emitted from semiconductor light-emitting device, and generates scattered light by scattering the excitation light. The wavelength conversion element includes a support member, and a wavelength converter disposed on the support member. The wavelength converter includes a first wavelength converter, and a second wavelength converter which is disposed around the first wavelength converter to surround the first wavelength converter in a top view of the surface of the support member on which the wavelength converter is disposed. The ratio of the intensity of fluorescence to that of scattered light is lower in the second wavelength converter than in the first wavelength converter.


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