The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Jan. 30, 2023
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Yeon Hong Kim, Hwaseong-si, KR;

Eun Hye Ko, Yongin-si, KR;

Eun Hyun Kim, Suwon-si, KR;

Kyoung Won Lee, Seoul, KR;

Sun Hee Lee, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/126 (2023.01); G09G 3/3208 (2016.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 50/80 (2023.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H10K 59/126 (2023.02); H10K 59/1315 (2023.02); H01L 27/124 (2013.01); H10K 59/1201 (2023.02); H10K 59/1213 (2023.02);
Abstract

A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.


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