The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

May. 25, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Song Yi Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/30 (2023.02); H01L 29/0665 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor memory device includes: first conductive lines provided on a substrate and extending in a first direction in parallel, each of the first conductive lines including a first end portion and a second end portion that are opposite to each other, the first direction being parallel to a top surface of the substrate; first selection transistors respectively connected to the first end portions of the first conductive lines; and second selection transistors respectively connected to the second end portions of the first conductive lines. Each of the first selection transistors may have a first gate width. Each of the second selection transistors may have a second gate width smaller than the first gate width.


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Kim, Song. (2024). Semiconductor memory device (U.S. Patent No. 12016186). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12016186

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