The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Oct. 28, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Naomi Fukumaki, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 23/522 (2006.01); H10B 43/20 (2023.01); H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/02019 (2013.01); H01L 21/0223 (2013.01); H01L 21/3212 (2013.01); H01L 23/5226 (2013.01); H10B 43/20 (2023.02); H10B 43/30 (2023.02); H01L 21/02365 (2013.01);
Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers, and forming a hole in the stacked film. The method further includes forming a first film, a first insulator, a charge storage layer, a second insulator and a first semiconductor layer in order in the hole, and forming a plurality of concave portions by removing the plurality of first insulating layers. The method further includes exposing the first insulator from the plurality of concave portions by removing the first film between the plurality of concave portions and the first insulator, and forming a plurality of electrode layers in the plurality of concave portions.


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