The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Mar. 24, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Hak Seon Kim, Seoul, KR;
Byung Joo Go, Hwaseong-si, KR;
Sung Kweon Baek, Hwaseong-si, KR;
Jae Hwa Seo, Seoul, KR;
Chang Heon Lee, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/06 (2006.01); H01L 29/06 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/06 (2013.01); H01L 29/0653 (2013.01); H10B 43/27 (2023.02);
Abstract
A semiconductor device comprises a substrate; an element isolation film that defines a first active region in the substrate; a first gate electrode on the first active region; a first source/drain region located inside the first active region between the element isolation film and the first gate electrode; and an isolation contact that extends in a vertical direction intersecting an upper face of the substrate, in the element isolation film. The isolation contact is configured to have a voltage applied thereto.