The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

May. 24, 2019
Applicant:

Gigajot Technology, Inc., Pasadena, CA (US);

Inventors:

Jiaju Ma, Monrovia, CA (US);

Saleh Masoodian, Monrovia, CA (US);

Assignee:

Gigajot Technology, Inc., Pasadena, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/146 (2006.01); H04N 25/59 (2023.01); H04N 25/616 (2023.01); H04N 25/65 (2023.01); H04N 25/778 (2023.01);
U.S. Cl.
CPC ...
H04N 25/75 (2023.01); H01L 27/14612 (2013.01); H04N 25/59 (2023.01); H04N 25/616 (2023.01); H04N 25/65 (2023.01); H04N 25/778 (2023.01);
Abstract

According to some embodiments, an image sensor pixel includes a floating diffusion, a transistor gate configured to transfer charge with respect to the floating diffusion, and a doped pinning region disposed between the floating diffusion and the transistor gate, to reduce or eliminate the effective capacitive coupling between the floating diffusion and the transistor gate. The transistor gate may be an in-pixel transfer gate configured to selectively transfer photocharge from an in-pixel charge accumulation region to the floating diffusion. Alternatively, or additionally, the transistor gate may be an in-pixel reset gate configured to selectively reset the electrostatic potential of the floating diffusion.


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