The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jun. 03, 2021
Applicant:
Suzhou Hanhua Semiconductor Co., Ltd., Jiangsu, CN;
Inventors:
Assignee:
SUZHOU HANHUA SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/04252 (2019.08); H01S 5/18369 (2013.01); H01S 5/18377 (2013.01); H01S 5/209 (2013.01);
Abstract
A method of fabricating vertical cavity surface emitting laser, comprising: providing a first substrate formed with a dielectric DBR and a first bonding layer, and a second substrate formed with a etch-stop layer, a heavily doped layer, an active region, a current-confinement layer, and an arsenide DBR firstly, then sticking a third substrate on the arsenide DBR, then removing the second substrate and the etch-stop layer, next bonding the heavily doped layer to the dielectric DBR, next removing the third substrate, finally forming a p-type electrode contact and an n-type electrode contact.