The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Jul. 29, 2021
Applicant:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Inventors:

Jae Kwon Kim, Gyeonggi-do, KR;

Min Chan Heo, Gyeonggi-do, KR;

Kyoung Wan Kim, Gyeonggi-do, KR;

Jong Kyu Kim, Gyeonggi-do, KR;

Hyun A Kim, Gyeonggi-do, KR;

Joon Sup Lee, Gyeonggi-do, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/10 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 27/156 (2013.01); H01L 33/10 (2013.01); H01L 33/46 (2013.01);
Abstract

A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.


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