The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Mar. 03, 2020
Infineon Technologies Ag, Neubiberg, DE;
Henning Feick, Dresden, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
According to an embodiment, a time of flight sensor device includes: a semiconductor substrate having a conversion region to convert an electromagnetic signal into photo-generated charge carriers, and including a substrate doping region having a n-doping type. The substrate doping region extends from a first main surface region of the semiconductor substrate into the semiconductor substrate. The semiconductor substrate has a p doped region adjacent to the substrate doping region. The substrate doping region at least partially forms the conversion region in the semiconductor substrate. A readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type is configured to readout the photo generated charge carriers. A control electrode is arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and has a p-doping type.