The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Feb. 05, 2021
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Jongmo Lim, Suwon-si, KR;

Wonsun Hwang, Suwon-si, KR;

Byeonghak Jo, Suwon-si, KR;

Yoosam Na, Suwon-si, KR;

Youngsik Hur, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/417 (2006.01); H03K 17/081 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41758 (2013.01); H01L 27/0207 (2013.01); H03K 17/08104 (2013.01);
Abstract

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.


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