The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Jul. 27, 2020
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Shigehiro Ikehara, Kanagawa, JP;

Masahiro Joei, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 31/0216 (2014.01); H04N 25/76 (2023.01); H10K 30/88 (2023.01); H10K 39/32 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 21/02274 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14665 (2013.01); H01L 31/02162 (2013.01); H04N 25/76 (2023.01); H10K 30/88 (2023.02); H01L 27/14638 (2013.01); H10K 39/32 (2023.02);
Abstract

The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent sealing properties and coverage, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and a sealing film that is formed on the upper layer of the photoelectric conversion film and has a lower etching rate than that of silicon oxide. The present technology can be applied to solid-state imaging devices having a photoelectric conversion film on the upper side of a semiconductor substrate, and the like, for example.


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