The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Apr. 13, 2022
Applicant:

Sony Group Corporation, Tokyo, JP;

Inventor:

Sozo Yokogawa, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/028 (2006.01); H01L 31/0376 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/146 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01); H01L 31/028 (2013.01); H01L 31/03762 (2013.01); H04N 2209/047 (2013.01);
Abstract

The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.


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