The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Nov. 30, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Youngjae Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/07 (2006.01); G05F 3/20 (2006.01); G05F 3/26 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/0222 (2013.01); G05F 3/205 (2013.01); G05F 3/26 (2013.01); H01L 27/0928 (2013.01); H02M 3/073 (2013.01); H02M 3/078 (2021.05); H10B 12/50 (2023.02);
Abstract

A body bias voltage generating circuit includes a current mirror circuit configured to generate and input a target current to a target semiconductor element, the target semiconductor element configured to be set to a turned-on state; and a charge pump circuit including an oscillator configured to output a clock signal based on a result of comparing an output voltage of the target semiconductor element with a reference voltage, and at least one charge pump outputting a body bias voltage to each of a plurality of semiconductor elements, wherein each of the plurality of semiconductor elements is the same as or is the same type as the target semiconductor element.


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