The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Aug. 16, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju-Il Choi, Seongnam-si, KR;

Kwang-Jin Moon, Hwaseong-si, KR;

Byung-Lyul Park, Seoul, KR;

Jin-Ho An, Seoul, KR;

Atsushi Fujisaki, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/14 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/5329 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/03618 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/10 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16013 (2013.01); H01L 2224/16111 (2013.01); H01L 2224/16112 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A method of manufacturing a semiconductor device is provided. The method includes forming a preliminary via structure through a portion of a substrate; partially removing the substrate to expose a portion of the preliminary via structure; forming a protection layer structure on the substrate to cover the portion of the preliminary via structure that is exposed; partially etching the protection layer structure to form a protection layer pattern structure and to partially expose the preliminary via structure; wet etching the preliminary via structure to form a via structure; and forming a pad structure on the via structure to have a flat top surface.


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