The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jul. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semi-damascene structure of a semiconductor device includes: forming a 1intermetal dielectric layer; forming a 1hardmask layer and at least one 1photoresist pattern on the 1intermetal dielectric layer; patterning at least one via hole penetrating through the 1hardmask layer and the 1intermetal dielectric using the 1photoresist pattern; removing the 1photoresist pattern among the 1photoresist pattern and the 1hardmask layer; forming a metal structure in the via hole such that the metal structure fills in the vial hole and extends on the 1hardmask layer; patterning the metal structure to form at least one 1trench penetrating at least the metal structure at a portion where the metal structure extends on the 1hardmask layer; and filling the 1trench with a 2inter-metal layer.