The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Mar. 26, 2019
Applicant:

Corning Incorporated, Corning, NY (US);

Inventors:

Ming-Huang Huang, Ithaca, NY (US);

Robert Bumju Lee, Horseheads, NY (US);

Rajesh Vaddi, Corning, NY (US);

Bin Zhu, Ithaca, NY (US);

Assignee:

CORNING INCORPORATED, Corning, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); H01L 29/78681 (2013.01); G02F 1/13685 (2021.01);
Abstract

A thin film transistor (TFT) liquid crystal display (LCD) comprises a plurality of image pixels demarcated between an overlying liquid crystal display layer and an underlying glass substrate. Each image pixel comprises a dedicated top-gate TFT disposed over the glass substrate. Each top-gate thin film transistor comprises a process sensitive semiconductor layer disposed over the glass substrate, and a source electrode and a drain electrode disposed over the process sensitive semiconductor layer. The process sensitive semiconductor layer forms a process sensitive semiconductor active layer between the source electrode and the drain electrode and an active layer protection film is disposed over the process sensitive semiconductor active layer. A gate dielectric layer is disposed over the active layer protection film between the source electrode and the drain electrode and a gate electrode is disposed over the gate dielectric layer.


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