The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Jan. 16, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
The present invention concerns a method and device for monitoring the gate signal of a power semiconductor (SI), the gate signal of the power semiconductor (SI) being provided by a gate driver (), generates an expected signal (VGexp) that corresponds to the signal outputted by the gate driver () when no deterioration of the gate driver () and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists, compares the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver (), determines if a deterioration of the gate driver () and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists using the result of the comparing of the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver ().