The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Feb. 25, 2021
Applicant:

Flusso Limited, Cambridgeshire, GB;

Inventors:

Ethan Gardner, Warwickshire, GB;

Andrea De Luca, Cambridgeshire, GB;

Florin Udrea, Cambridgeshire, GB;

Assignee:

Flusso Limited, Cambridgeshire, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/692 (2006.01); G01F 1/684 (2006.01); G01L 9/00 (2006.01); G01L 19/00 (2006.01);
U.S. Cl.
CPC ...
G01F 1/692 (2013.01); G01F 1/6845 (2013.01); G01L 9/0073 (2013.01); G01L 19/0092 (2013.01);
Abstract

We disclose herein a sensing device comprising a semiconductor substrate having a first etched portion, a dielectric layer located on or over the semiconductor substrate, wherein the dielectric layer comprises a first dielectric membrane located adjacent to the first etched portion of the semiconductor substrate, a pressure sensing element and/or a flow sensing element within the first dielectric membrane, and a first structure configured to reinforce the dielectric membrane. A first portion of the first structure is located within the first dielectric membrane, the first structure has a higher stiffness than the first dielectric membrane, and the first portion of the first structure is located between a perimeter of the dielectric membrane and the pressure sensing element or flow sensing element.


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