The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
May. 11, 2021
Applicant:
Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-Si, KR;
Inventors:
Tae Joo Park, Ansan-si, KR;
Dae Woong Kim, Ansan-si, KR;
Tae Jun Seok, Yongin-si, KR;
Hye Rim Kim, Dongducheon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/245 (2023.02); C23C 16/40 (2013.01); C23C 16/403 (2013.01); C23C 16/45529 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01); G11C 13/0011 (2013.01); G11C 13/0069 (2013.01); H10N 70/023 (2023.02); H10N 70/826 (2023.02); H10N 70/8836 (2023.02);
Abstract
A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).