The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Mar. 12, 2021
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Masashi Tsubuku, Minato-ku, JP;
Tatsuya Toda, Minato-ku, JP;
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H01L 27/1225 (2013.01); H01L 2029/42388 (2013.01);
Abstract
A thin film transistor including: an active layer formed of an oxide semiconductor including at least indium and gallium; a gate electrode; a first gate insulating layer disposed between the active layer and the gate electrode on the gate electrode side; and a second gate insulating layer, which is a hydrogen block layer, disposed between the active layer and the gate electrode on the active layer side.