The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Sep. 07, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Leeeun Ku, Seoul, KR;
Yuna Lee, Seoul, KR;
Sunyoung Kim, Seongnam-si, KR;
Kyungjae Park, Hwaseong-si, KR;
Jonghyun Park, Hwaseong-si, KR;
Bora Lee, Hwaseong-si, KR;
Jongho Lim, Yongin-si, KR;
Abstract
A vertical type non-volatile memory device includes a substrate having a cell array area of a block unit and an extension area, a vertical contact disposed in the extension area, a plurality of vertical channel structures provided on the substrate in the cell array area, a plurality of dummy channel structures provided on the substrate in the extension area, and a plurality of gate electrode layers and a plurality of interlayer insulation layers stacked alternately on the substrate. In an electrode pad connected to the vertical contact, dummy channel structures are disposed at both sides of the vertical contact and a horizontal cross-sectional surface of each of the plurality of dummy channel structures has a shape which is longer in one direction.