The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Jun. 01, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Chiu Keung Tang, San Diego, CA (US);

Zhiqin Chen, San Diego, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 27/02 (2006.01); H03K 17/687 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6872 (2013.01); G11C 7/06 (2013.01); G11C 27/02 (2013.01); H03K 17/6874 (2013.01); H03K 19/20 (2013.01);
Abstract

A regeneration circuit includes a first inverting circuit, a second inverting circuit, a first transistor coupled to an input of the second inverting circuit, and a second transistor coupled to an input of the first inverting circuit. The regeneration circuit also includes a third transistor including a gate coupled to a gate of the first transistor, a first switch configured to couple the third transistor to the input of the second inverting circuit based on a voltage of the first inverting circuit, a fourth transistor including a gate coupled to a gate of the second transistor, and a second switch configured to couple the fourth transistor to the input of the first inverting circuit based on a voltage of the second inverting circuit.


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