The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
May. 31, 2022
Fudan University, Shanghai, CN;
Min Xu, Shanghai, CN;
Jian Jin, Shanghai, CN;
Mengyuan Sun, Shanghai, CN;
Bin Wang, Shanghai, CN;
Wei Zhang, Shanghai, CN;
FUDAN UNIVERSITY, Shanghai, CN;
Abstract
The present invention provides a drive module for a GaN transistor, including: a first pull-down transistor and a gate ringing and overshoot suppression unit, where the gate ringing and overshoot suppression unit and a first end of the first pull-down transistor are directly or indirectly connected to a gate of the GaN transistor, the gate ringing and overshoot suppression unit is connected between a second end of the first pull-down transistor and the ground; the gate ringing and overshoot suppression unit is configured to: when a gate voltage of the GaN transistor drops, control the release of a gate charge of the GaN transistor with a first impedance if the gate voltage is higher than a specified threshold; and control the release of the gate charge of the GaN transistor with a second impedance if the gate voltage is less than the specified threshold, where the first impedance is less than the second impedance.