The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Feb. 28, 2023
Applicant:

Silicon Laboratories Inc., Austin, TX (US);

Inventors:

Ruifeng Sun, Charlottesville, VA (US);

Sherry Wu, Austin, TX (US);

Michael S. Johnson, Austin, TX (US);

Vitor Pereira, Austin, TX (US);

Assignee:

Silicon Laboratories Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/24 (2006.01); H03F 1/02 (2006.01); H04B 1/04 (2006.01); H04L 27/12 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/0233 (2013.01); H04B 1/04 (2013.01); H04L 27/12 (2013.01); H03F 2200/105 (2013.01); H03F 2200/451 (2013.01); H04B 2001/0408 (2013.01);
Abstract

In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.


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