The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Mar. 13, 2019
Applicant:
Univ South China Normal, Guangdong, CN;
Inventor:
Richard Notzel, Guangzhou, CN;
Assignee:
UNIV SOUTH CHINA NORMAL, Guangdong, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/007 (2013.01); H01L 33/0087 (2013.01); H01L 33/28 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 33/42 (2013.01);
Abstract
An InGaN-based LED epitaxial wafer and a fabrication method thereof are disclosed, wherein the InGaN-based LED epitaxial wafer includes: a substrate; an InGaN layer, formed on a surface of the substrate, having an In content between 40% and 90%, so as to ensure that the LED epitaxial wafer is capable of emitting long-wavelength light or near-infrared rays; a p-type metal oxide layer, formed on a surface of the InGaN layer facing away from the substrate, acting as a hole injection layer for the InGaN layer.