The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Jun. 22, 2021
Tianjin Sanan Optoelectronics Co., Ltd., Tianjin, CN;
Chunfu Tsai, Tianjin, CN;
Chihhung Hsiao, Tianjin, CN;
Tianjin Sanan Optoelectronics Co., LTD, Tianjin, CN;
Abstract
An infrared light-emitting diode (LED) includes a semiconductor light-emitting unit which includes an active layer, a first waveguide layer, a second waveguide layer, a first cladding layer and a second cladding layer. The active layer includes at least one pair of layers. Each pair of layers includes a well layer and a barrier layer. The first and the second waveguide layers are respectively disposed on two opposite sides of the active layer, and are independently made of a semiconductor compound represented by (AlGa)InP, wherein 0≤X3≤1 and 0≤Y1≤1. The first cladding layer is disposed on the first waveguide layer opposite to the active layer. The second cladding layer is disposed on the second waveguide layer opposite to the active layer.