The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Jan. 20, 2023
Applicant:

Maxeon Solar Pte. Ltd., Singapore, SG;

Inventors:

Seung Bum Rim, Palo Alto, CA (US);

Michael C. Johnson, Alameda, CA (US);

Assignee:

Maxeon Solar Pte. Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 31/022441 (2013.01); H01L 31/02363 (2013.01); H01L 31/0352 (2013.01); H01L 31/0747 (2013.01); Y02E 10/50 (2013.01);
Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.


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