The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Sep. 29, 2023
Applicant:

Solarlab Aiko Europe Gmbh, Freiburg, DE;

Inventors:

Gang Chen, Yiwu, CN;

Wenli Xu, Yiwu, CN;

Kaifu Qiu, Yiwu, CN;

Yongqian Wang, Yiwu, CN;

Xinqiang Yang, Yiwu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/035281 (2013.01);
Abstract

The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.


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