The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Nov. 08, 2021
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Takahiro Maruyama, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 51/30 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/66795 (2013.01); H01L 29/6684 (2013.01); H01L 29/7851 (2013.01); H10B 51/30 (2023.02);
Abstract
A semiconductor device includes a ferroelectric memory having a ferroelectric film between a gate electrode and a semiconductor substrate. The ferroelectric film and a metal film are not formed just above an element isolation region formed in a trench in an upper surface of the semiconductor substrate, but are formed on the semiconductor substrate in the active region defined by the element isolation region to prevent a state in which a polarization state in the ferroelectric film of the active region and a polarization state in the ferroelectric film on the element isolation region differ from each other.