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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12009417 B1

PDFFull Text
Date of Patent:
Jun. 11, 2024

Filed:

May. 20, 2021

High electron mobility transistors having improved performance

Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Kyle Bothe, Cary, NC (US);

Joshua Bisges, Wake Forest, NC (US);

Assignee:

MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Ali Naraghi

Assistant Examiner:

Siangluai Mang

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/76 (2006.01); H01L 21/765 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H03F 1/42 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/7605 (2013.01); H01L 21/765 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/4175 (2013.01); H01L 29/66462 (2013.01); H03F 1/42 (2013.01); H03F 3/213 (2013.01); H03F 2200/36 (2013.01);
Abstract

A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.

Find Patent Forward Citations

Bothe, Kyle. (2024). High electron mobility transistors having improved performance (U.S. Patent No. 12009417). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12009417

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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