The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Mar. 30, 2022
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventor:
Katsunori Ueno, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 29/0623 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 21/046 (2013.01); H01L 21/26546 (2013.01); H01L 21/3245 (2013.01);
Abstract
A vertical MOSFET having a compound semiconductor layer is provided, the vertical MOSFET comprising a gate electrode, a gate insulating film provided between the gate electrode and the compound semiconductor layer, a drift region provided directly in contact with at least a part of the gate insulating film and being a part of the compound semiconductor layer, and a high resistance region provided at least in the drift region, is positioned below at least a part of the gate insulating film, and has a higher resistance value per unit length than that of the drift region.