The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

May. 27, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Hironobu Fukui, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
Abstract

A solid-state imaging device includes a first semiconductor substrate, an isolation region, a charge holding section, and a charge accumulation section. The first semiconductor substrate is a substrate in which a photoelectric converter is provided for each of unit regions. The isolation region is provided to run through the first semiconductor substrate in a thickness direction and electrically isolates the unit regions from each other. The charge holding section is electrically coupled to the photoelectric converter and configured to receive signal charge from the photoelectric converter. The charge accumulation section is shared by two or more of the unit regions and is a section to which the signal charge is transferred from the photoelectric converter and the charge holding section of each of the unit regions sharing the charge accumulation section.


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