The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Nov. 10, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n-type drift layer on the first main surface side of the n-type drift layer and having a higher n-type impurity concentration than the n-type drift layer, a p-type base layer provided between the n-type carrier accumulation layer and the first main surface, an n-type emitter layer selectively provided in a surface layer portion of the p-type base layer, and a gate electrode provided to face the n-type emitter layer and the p-type base layer with an interposition of an insulating film. A diode region includes a p-type anode layer provided between the n-type drift layer and the first main surface and provided to a position deeper from the first main surface than a boundary between the n-type carrier accumulation layer and the n-type drift layer.