The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Jan. 22, 2020
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Atsushi Kurokawa, Nagaokakyo, JP;

Koshi Himeda, Nagaokakyo, JP;

Kazuya Kobayashi, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/00 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/082 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 23/528 (2013.01); H01L 24/13 (2013.01); H01L 27/0207 (2013.01); H01L 27/082 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/165 (2013.01); H01L 29/205 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/452 (2013.01); H01L 29/7371 (2013.01);
Abstract

A semiconductor apparatus includes a substrate, plural transistor groups disposed on the substrate, an insulating film, and a metal member. Each of the plural transistor groups includes plural unit transistors arranged in a first direction within a plane of a top surface of the substrate. The plural transistor groups are arranged in a second direction perpendicular to the first direction. The insulating film covers the plural unit transistors and includes at least one cavity. The metal member is disposed on the insulating film and is electrically connected to the plural unit transistors via the at least one cavity. A heat transfer path is formed by a metal in a region from each of the plural unit transistors to a top surface of the metal member. Thermal resistance values of the heat transfer paths are different from each other among the plural unit transistors.


Find Patent Forward Citations

Loading…