The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Oct. 06, 2022
Applicant:

Soitec, Bernin, FR;

Inventor:

Young-Pil Kim, Grenoble, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/4404 (2013.01); C23C 16/4405 (2013.01); H01L 21/02238 (2013.01);
Abstract

A process for preparing a support comprises the placing of a substrate on a susceptor in a chamber of a deposition system, the susceptor having an exposed surface not covered by the substrate; the flowing of a precursor containing carbon in the chamber at a deposition temperature so as to form at least one layer on an exposed face of the substrate, while at the same time depositing species of carbon and of silicon on the exposed surface of the susceptor. The process also comprises, directly after the removal of the substrate from the chamber, a first etch step consisting of the flowing of an etch gas in the chamber at a first etching temperature not higher than the deposition temperature so as to eliminate at least some of the species of carbon and silicon deposited on the susceptor.


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