The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Mar. 29, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Daeshik Kim, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); H10B 61/20 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract
A memory device includes; a memory cell array including a first memory cell region and a second memory cell region, a voltage generator configured to generate a code corresponding to a write voltage, and a write driver configured to store data in the first memory cell region in response to the code. The second memory cell region stores a value defining the write voltage, and the write voltage is determined in relation to a reference resistance distinguishing a parallel state and an anti-parallel state for the memory cells, and further in relation to an initial write voltage applied to a magnetic tunnel junction element of at least one of the memory cells.