The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Jan. 26, 2018
Università Degli Studi Di Bari Aldo Moro, Bari, IT;
Luisa Torsi, Bari, IT;
Gaetano Scamarcio, Bari, IT;
Eleonora Macchia, Bari, IT;
Kyriaki Manoli, Bari, IT;
Gerardo Palazzo, Bari, IT;
Nicola Cioffi, Bari, IT;
Rosaria Anna Picca, Bari, IT;
UNIVERSITÀ DEGLI STUDI DI BARI ALDO MORO, Bari, IT;
Abstract
A field effect transistor sensor includes: a source-drain channel, a semiconductor layer on said source-drain channel, a first gate electrode arranged above said semiconductor layer, a first well enclosing said source-drain channel, said semiconductor layer and said first gate electrode, the first well being configured to be filled, in use, with a first liquid, particularly a gating electrolyte, a second gate electrode arranged above the first gate electrode and exposed to an interior of the first well. Also disclosed is an array device including an array of field effect transistor sensors according to the above.