The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

May. 03, 2022
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Aidin Fathalizadeh, Berkeley, CA (US);

Thang Pham, Berkeley, CA (US);

William Mickelson, Albany, CA (US);

Alexander Zettl, Kensington, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/064 (2006.01); B01J 19/08 (2006.01); B82Y 40/00 (2011.01); C04B 35/583 (2006.01); C04B 35/622 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
C01B 21/0641 (2013.01); B01J 19/08 (2013.01); B82Y 40/00 (2013.01); C01B 21/064 (2013.01); C04B 35/583 (2013.01); C04B 35/622 (2013.01); B01J 2219/0879 (2013.01); B01J 2219/0894 (2013.01); B82Y 30/00 (2013.01); C01P 2002/82 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2004/13 (2013.01); C01P 2004/24 (2013.01); C04B 2235/5276 (2013.01); C04B 2235/5284 (2013.01); C04B 2235/5454 (2013.01); C04B 2235/767 (2013.01); C04B 2235/95 (2013.01); Y10S 977/762 (2013.01); Y10S 977/896 (2013.01);
Abstract

This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.


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