The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
May. 18, 2021
King Abdullah University of Science and Technology, Thuwal, SA;
Bin Xin, Thuwal, SA;
Iman S. Roqan, Thuwal, SA;
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Abstract
A method for making ion-crystal semiconductor material based micro- and/or nanowires, MNWs, embedded into a semiconductor substrate, includes forming a structure into the semiconductor substrate, wherein the structure has each of a width and a depth less than 10 μm; pumping an ion-crystal semiconductor material as an ion solution into the structure, wherein the pumping is achieved exclusively due to capillary forces; flowing the ion solution through the structure to fill the structure; crystallizing the ion-crystal semiconductor material inside the structure to form the MNWs; and adding electrodes to ends of the MNWs.