The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Jun. 01, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Min Gyu Sung, Latham, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Chanro Park, Clifton Park, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/8418 (2023.02); H10B 63/30 (2023.02); H10N 70/063 (2023.02); H10N 70/828 (2023.02); H10N 70/8833 (2023.02);
Abstract

A method of manufacturing an RRAM cell includes forming a first wire, forming an insulator on the first wire, the insulator having a pore and an insulator surface, and forming a first electrode layer on the first wire and the insulator, the first electrode having an electrode surface. The method further includes recessing the first electrode layer such that the electrode surface is recessed toward the first wire from the insulator surface, forming a switching layer on the insulator and the first electrode, and forming a second electrode on the switching layer.


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