The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Jul. 29, 2020
Applicant:

Lumentum Operations Llc, San Jose, CA (US);

Inventors:

Ajit Vijay Barve, San Jose, CA (US);

Matthew Glenn Peters, Menlo Park, CA (US);

Eric R. Hegblom, Sunnyvale, CA (US);

Assignee:

Lumentum Operations LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/42 (2006.01); G01S 7/481 (2006.01); G01S 7/484 (2006.01); G01S 17/10 (2020.01); H01S 5/042 (2006.01); H01S 5/10 (2021.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01S 5/423 (2013.01); G01S 7/4815 (2013.01); G01S 7/484 (2013.01); G01S 17/10 (2013.01); H01S 5/04252 (2019.08); H01S 5/1071 (2013.01); H01S 5/18305 (2013.01); H01S 5/18311 (2013.01);
Abstract

A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.


Find Patent Forward Citations

Loading…