The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Nov. 02, 2023
Applicant:

Trina Solar Co., Ltd, Changzhou, CN;

Inventors:

Chengfa Liu, Changzhou, CN;

Hong Chen, Changzhou, CN;

Daming Chen, Changzhou, CN;

Yifeng Chen, Changzhou, CN;

Assignee:

TRINA SOLAR CO., LTD, Changzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1868 (2013.01); H01L 31/022425 (2013.01); H01L 31/02363 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); H01L 31/02167 (2013.01);
Abstract

The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.


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