The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Sep. 06, 2022
Applicant:

Alpha Power Solutions Limited, Hong Kong, CN;

Inventors:

Wing Kit Cheung, Hong Kong, CN;

Wai Tien Chan, Hong Kong, CN;

Wing Chong Tony Chau, Hong Kong, CN;

Ho Nam Lee, Hong Kong, CN;

Qian Sun, Hong Kong, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/2815 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/66143 (2013.01); H01L 29/7806 (2013.01);
Abstract

One embodiment provides a semiconductor device. The device comprises a substrate having a first face and a second face, a well region, a source region disposed in the well region, a contact region contacting the well region and the source region, a Schottky region, and a source metal layer. A first part of the source metal layer contacts the Schottky region to form a Schottky diode. The Schottky region is surrounded by the contact region and the well region in a first plane perpendicular to a direction from the first face toward the second face.


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